MRF6V10250HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
40 10050
0.1
1000
02010
30
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 3. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
Ciss
1
50
1
TC
=25°C
10
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. DC Safe Operating Area
I
D
, DRAIN CURRENT (AMPS)
10
1
Coss
Crss
Measured with
±30 mV(rms)ac @ 1 MHz
VGS
=0Vdc
100
TJ
= 200°C
TJ
= 150°C
TJ
= 175°C
24
50
30
100
22
20
70
60
50
40
Pout, OUTPUT POWER (WATTS) PULSED
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
G
ps
, POWER GAIN (dB)
η
D,
DRAIN EFFICIENCY (%)
ηD
16
400
Gps
48
58
26
56
55
54
Pin, INPUT POWER (dBm) PULSED
Figure 6. Pulsed Output Power versus
Input Power
57
53
52
51
50
28 30 32 34 36 38
P
out
, OUTPUT POWER (dBm) PULSED
P3dB = 54.94 dBm (311 W)
Actual
Ideal
P1dB = 54.55 dBm (285 W)
17
23
50
22
21
Pout, OUTPUT POWER (WATTS) PULSED
Figure 7. Pulsed Power Gain versus
Output Power
G
ps
, POWER GAIN (dB)
100
20
IDQ
=1A
400
750 mA
Figure 8. Pulsed Power Gain versus
Output Power
Pout, OUTPUT POWER (WATTS) PULSED
G
ps
, POWER GAIN (dB)
VDD
=30V
14
22
50
16
21
35 V
20
45 V
100 400
50 V
49
18
19
18
500 mA
250 mA
19
18
17
15
VDD
=50Vdc,IDQ
= 250 mA, f = 1090 MHz
Pulse Width = 100
μsec, Duty Cycle = 10%
IDQ
= 250 mA, f = 1090 MHz
Pulse Width = 100
μsec
Duty Cycle = 10%
40 V
VDD
=50Vdc,IDQ
= 250 mA, f = 1090 MHz
Pulse Width = 100
μsec, Duty Cycle = 10%
VDD
= 50 Vdc, f = 1090 MHz
Pulse Width = 100
μsec, Duty Cycle = 10%
300
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
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